A Barristor Company | Graphene Barristor

On the other hand, the 1550 nm wavelength has a million times higher MPE than the near-infrared region, which allows for the use of more powerful lasers, and can detect relatively long distances because of the greater MPE. This 1550 nm wavelength region has many advantages over the near-infrared region, but currently used silicon detectors have a detection limit of 1100 nm, making them unsuitable for longer wavelengths. Therefore, alternative materials such as InGaAs are being used, but their high cost and low sensitivity make them difficult to apply in high performance LiDAR.

In a quantum dot-graphene FET structure, the quantum dots are charged by light, and this charge acts to gate the graphene, changing the current flowing through it. This process allows light to be detected, and the use of graphene with high charge mobility allows for higher efficiency and sensitivity than traditional semiconductor-based methods. Furthermore, the structure can be realized by a simple process of coating quantum dots onto graphene FETs, which has the major advantage of being easy to manufacture. These characteristics simultaneously improve the sensor's performance and production efficiency. However, the quantum dot-graphene FET structure has the disadvantage of having a low response due to the limitations of the graphene FET’s a low on/off ratio (~10), which makes it susceptible to noise.

The integration of graphene with quantum dots is a promising approach to enhance the efficiency of quantum dot photosensors. Graphene's high charge mobility complements the strong light-absorption capacity of quantum dots, potentially overcoming the limitations of low charge mobility and high operational voltages. Barristors have much higher on/off ratio than graphene FETs, making them more immune to noise, and they are also sensitive to small changes in current, allowing them to detect light at low intensities. They also operate effectively at low voltages, making them energy efficient. This makes them ideal for applications that require high sensitivity and low noise levels.

On the other hand, the 1550 nm wavelength has a million times higher MPE than the near-infrared region, which allows for the use of more powerful lasers, and can detect relatively long distances because of the greater MPE. This 1550 nm wavelength region has many advantages over the near-infrared region, but currently used silicon detectors have a detection limit of 1100 nm, making them unsuitable for longer wavelengths. Therefore, alternative materials such as InGaAs are being used, but their high cost and low sensitivity make them difficult to apply in high performance LiDAR.

In a quantum dot-graphene FET structure, the quantum dots are charged by light, and this charge acts to gate the graphene, changing the current flowing through it. This process allows light to be detected, and the use of graphene with high charge mobility allows for higher efficiency and sensitivity than traditional semiconductor-based methods. Furthermore, the structure can be realized by a simple process of coating quantum dots onto graphene FETs, which has the major advantage of being easy to manufacture. These characteristics simultaneously improve the sensor's performance and production efficiency. However, the quantum dot-graphene FET structure has the disadvantage of having a low response due to the limitations of the graphene FET’s a low on/off ratio (~10), which makes it susceptible to noise.

The integration of graphene with quantum dots is a promising approach to enhance the efficiency of quantum dot photosensors. Graphene's high charge mobility complements the strong light-absorption capacity of quantum dots, potentially overcoming the limitations of low charge mobility and high operational voltages. Barristors have much higher on/off ratio than graphene FETs, making them more immune to noise, and they are also sensitive to small changes in current, allowing them to detect light at low intensities. They also operate effectively at low voltages, making them energy efficient. This makes them ideal for applications that require high sensitivity and low noise levels.