A Barristor Company | Graphene Barristor

Graphene barristors, on the other hand, represent a significant solution to the limitations of GFETs. By leveraging the unique properties of graphene, barristors can modulate the Schottky barrier at the junction, which in turn controls the device current. This sensitivity to changes in charge density allows the device current to reach values roughly proportional to the exponential power to the square root of the charge density, much higher current responsivity compared to GFETs, making barristors highly effective for a range of applications. In case of gas molecules with a few p.p.m. concentration, GFET exhibits a current change of about 100 %, while graphene barristor can exhibit a change about 10^5 %.

Graphene barristors are expected to show great performances as a sensor platform. Graphene barristor’s super sensitivity and fast responsivity allow it to detect only a few copies of targets with a single current measurement. As it shares the advantages of graphene transistor-based sensors, such as broad surface functionality to the various target materials (e.g. antigens, biomarkers for DNA, light sensitive quantum dots, and etc.) it is possible to fabricate sensors for various target materials through a single structural device. This versatility makes the graphene barristor a ubiquitous sensor platform.

Graphene is highly sensitive to changes in induced charge from the surrounding environment, which has led to reported research on sensors for various targets (gas, DNA, light) using graphene transistors. However, there are clear limitations in enhancing sensitivity due to structural issues inherent in transistors, where the change in current is directly proportional to the charge amount. In contrast, graphene barristors are devices that overcome these problems found in graphene transistors. Barristor-based sensors utilize the change in charge induced by the target and the resultant alteration in the Schottky barrier. While graphene transistors show a current change about ten times the charge amount, graphene barristors can exhibit changes up to a million times greater, suggesting that they could achieve extremely high sensitivity when used as sensors. Additionally, these barristor sensors share the benefits of graphene transistor-based sensors, including the ability to fabricate sensors for a diverse range of target substances using a single structural device.

Graphene barristors, on the other hand, represent a significant solution to the limitations of GFETs. By leveraging the unique properties of graphene, barristors can modulate the Schottky barrier at the junction, which in turn controls the device current. This sensitivity to changes in charge density allows the device current to reach values roughly proportional to the exponential power to the square root of the charge density, much higher current responsivity compared to GFETs, making barristors highly effective for a range of applications. In case of gas molecules with a few p.p.m. concentration, GFET exhibits a current change of about 100 %, while graphene barristor can exhibit a change about 10^5 %.

Graphene barristors are expected to show great performances as a sensor platform. Graphene barristor’s super sensitivity and fast responsivity allow it to detect only a few copies of targets with a single current measurement. As it shares the advantages of graphene transistor-based sensors, such as broad surface functionality to the various target materials (e.g. antigens, biomarkers for DNA, light sensitive quantum dots, and etc.) it is possible to fabricate sensors for various target materials through a single structural device. This versatility makes the graphene barristor a ubiquitous sensor platform.

Graphene is highly sensitive to changes in induced charge from the surrounding environment, which has led to reported research on sensors for various targets (gas, DNA, light) using graphene transistors. However, there are clear limitations in enhancing sensitivity due to structural issues inherent in transistors, where the change in current is directly proportional to the charge amount. In contrast, graphene barristors are devices that overcome these problems found in graphene transistors. Barristor-based sensors utilize the change in charge induced by the target and the resultant alteration in the Schottky barrier. While graphene transistors show a current change about ten times the charge amount, graphene barristors can exhibit changes up to a million times greater, suggesting that they could achieve extremely high sensitivity when used as sensors. Additionally, these barristor sensors share the benefits of graphene transistor-based sensors, including the ability to fabricate sensors for a diverse range of target substances using a single structural device.