TECHNOLOGY
TECHNOLOGY
Graphene Barristor
Graphene Barristors: Elevating Electronics withSuperior Switching and Enhanced Sensing Capabilities
Graphene barristors significantly improve upon graphene field-effect transistors (GFETs) by offering a higher on-off ratio and the ability to adjust the Schottky barrier height through gate voltage, overcoming GFET limitations. Additionally, functionalizing graphene surfaces further enhances barristor performance, particularly in sensitive and selective sensor applications.
Graphene barristors represent a significant advancement in the field of electronics, offering advantages over graphene field-effect transistors (GFETs). Firstly, they exhibit a high on-off ratio comparing to the GFETs. It enables graphene-semiconductor junctions without Fermi-level pinning, thus the height of the Schottky barrier at the graphene-semiconductor junction can be adjusted by the voltage applied to the gate, providing a new method for turning off unlike the GFETs. The ON/OFF ratio can be obtained to over 10^6, surpassing the limitations 100 of GFETs’.
The functionalization of graphene surfaces enhances the capabilities of barristor devices, particularly in sensor applications. These devices can detect gas molecules, organic materials, and light with a higher degree of responsivity compared to GFETs. The unique properties of graphene, such as its high electrical conductivity and large surface area, make it an ideal candidate for such modifications, which aim to improve sensitivity and selectivity in various sensing targets.
Graphene Barristor
Graphene Barristors: Elevating Electronics withSuperior Switching
and Enhanced Sensing Capabilities
Graphene barristors significantly improve upon graphene field-effect transistors (GFETs) by offering a higher on-off ratio and the ability to adjust the Schottky barrier height through gate voltage, overcoming GFET limitations. Additionally, functionalizing graphene surfaces further enhances barristor performance, particularly in sensitive and selective sensor applications.
Graphene barristors represent a significant advancement in the field of electronics, offering advantages over graphene field-effect transistors (GFETs). Firstly, they exhibit a high on-off ratio comparing to the GFETs. It enables graphene-semiconductor junctions without Fermi-level pinning, thus the height of the Schottky barrier at the graphene-semiconductor junction can be adjusted by the voltage applied to the gate, providing a new method for turning off unlike the GFETs. The ON/OFF ratio can be obtained to over 10^6, surpassing the limitations 100 of GFETs’.
The functionalization of graphene surfaces enhances the capabilities of barristor devices, particularly in sensor applications. These devices can detect gas molecules, organic materials, and light with a higher degree of responsivity compared to GFETs. The unique properties of graphene, such as its high electrical conductivity and large surface area, make it an ideal candidate for such modifications, which aim to improve sensitivity and selectivity in various sensing targets.
A Barristor Company
EMAIL : barristor.com@gmail.com
Room 610 KU Innovation Building, 120 Neungdong-Ro, Gwangjin-Gu, Seoul, 05029, Republic of Korea
Copyright © 2024 A Barristor Company.
All rights reserved.
A Barristor Company ใ
ฃ EMAIL : barristor.com@gmail.com
Room 610 KU Innovation Building, 120 Neungdong-Ro, Gwangjin-Gu, Seoul, 05029, Republic of Korea
Copyright © 2024 A Barristor Company. All rights reserved.
